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1. product profile 1.1 general description the BF1218 is a combination of two dual ga te mosfet amplifiers with shared source and gate2 leads and an integrated switch. the integrated switch is operated by the gate1 bias of amplifier b. the source and substrate are interconnected. in ternal bias circuits enable dc stabilization and a very good cross modulation performance during automatic gain control (agc). integrated diodes between the gates and sour ce protect against excessive input voltage surges. the transistor has a sot363 micro-miniature plastic package. 1.2 features and benefits ? two low noise gain controlled amplifiers in a single package. one with a fully integrated bias and one with a partly integrated bias ? internal switch to sa ve external components ? superior cross modulation performance during agc ? high forward transfer admittance ? high forward transfer admittance to input capacitance ratio 1.3 applications ? gain controlled low noise am plifiers for vhf and uhf applications with 5 v supply voltage ? digital and analog television tuners ? professional communication equipment BF1218 dual n-channel dual gate mosfet rev. 01 ? 14 april 2010 product data sheet caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 2 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. [2] calculated from s-parameters. [3] measured in figure 33 test circuit. [4] measured in figure 34 test circuit. 2. pinning information table 1. quick reference data per mosfet unless otherwise specified. symbol parameter conditions min typ max unit v ds drain-source voltage dc - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp ? 109 ?c [1] - - 180 mw ?y fs ? forward transfer admittance f = 100 mhz; t j = 25 ?c amplifier a; i d =19ma 26 31 41 ms amplifier b; i d =15ma 25 30 40 ms c iss(g1) input capacitance at gate1 f = 100 mhz amplifier a [2] -2.12.6pf amplifier b [2] -2.12.6pf c rss reverse transfer capacitance f = 100 mhz [2] -20-ff nf noise figure y s =y s(opt) amplifier a; f = 400 mhz - 0.9 1.5 db amplifier b; f = 800 mhz - 1.4 2.0 db xmod cross modulation input level for k = 1 %; f w =50mhz; f unw =60mhz at 40 db agc amplifier a [3] 102 105 - db ? v amplifier b [4] 102 105 - db ? v t j junction temperature - - 150 ?c table 2. discrete pinning pin description simplified outline graphic symbol 1 gate1 (amp a) 2gate2 3 gate1 (amp b) 4 drain (amp b) 5source 6 drain (amp a) 13 2 4 56 sym089 g1b g1a g2 s da db amp b amp a
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 3 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 3. ordering information 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 3. ordering information type number package name description version BF1218 - plastic surface-mounted package; 6 leads sot363 table 4. marking codes type number marking code BF1218 m7 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage dc - 6 v i d drain current dc - 30 ma i g1 gate1 current - ? 10 ma i g2 gate2 current - ? 10 ma p tot total power dissipation t sp ? 109 ?c [1] -180mw t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 4 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 (b) to v gg = 0 v (see figure 3 ). [2] r g1 connects gate1 (b) to v gg = 5 v (see figure 3 ). table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 225 k/w table 7. static characteristics t j =25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit per mosfet; unless otherwise specified v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 ? a amplifier a 6 - - v amplifier b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d =100 ? a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d =100 ? a 0.4 - 1.0 v i ds drain-source current v g2-s =4v; v ds(b) =5v; r g1 =86k ? amplifier a; v ds(a) =5v [1] 14 - 24 ma amplifier b [2] 10 - 20 ma i g1-s gate1 cut-off current v g2-s =v ds(a) =0v amplifier a; v g1-s(a) =5v; i d(b) =0a - - 50 na amplifier b; v g1-s(b) =5v; v ds(b) =0v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v g1-s(b) =0v; v g1-s(a) =v ds(a) =v ds(b) =0v --20na
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 5 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 8. dynamic characteristics 8.1 dynamic characteristics for amplifier a (1) i d(b) ; r g1 =68k ? . (2) i d(b) ; r g1 =86k ? . (3) i d(b) ; r g1 = 100 k ? . (4) i d(a) ; r g1 = 100 k ? . (5) i d(a) ; r g1 =86k ? . (6) i d(a) ; r g1 =68k ? . v gg = 5 v: amplifier a is off; amplifier b is on. v gg = 0 v: amplifier a is on; amplifier b is off. fig 2. drain currents of mosfet a and b as a function of v gg fig 3. functional diagram v gg (v) 05 4 23 1 001aag356 8 12 4 16 20 i d (ma) 0 (1) (2) (3) (4) (5) (6) 001aac205 r g1 v gg g1b g2 g1a db s da table 8. dynamic characteristics for amplifier a [1] common source; t amb =25 ? c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise specified. symbol parameter conditions min typ max unit ?y fs ? forward transfer admittance f = 100 mhz; t j =25 ?c2 6 3 1 4 1 m s c iss(g1) input capacitance at gate1 f = 100 mhz [2] -2.12.6pf c iss(g2) input capacitance at gate2 f = 100 mhz [2] -3.4- pf c oss output capacitance f = 100 mhz [2] -0.8- pf c rss reverse transfer capacitance f = 100 mhz [2] -20- ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) f=200mhz; g s =2ms; g l = 0.5 ms 32 36 40 db f=400mhz; g s =2ms; g l = 1 ms 28 32 36 db f=800mhz; g s = 3.3 ms; g l = 1 ms 24 28 33 db nf noise figure f = 11 mhz; g s =20ms; b s = 0 s - 3.0 - db f=400mhz; y s =y s(opt) -0.91.5db f=800mhz; y s =y s(opt) -1.11.7db
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 6 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet [1] for the mosfet not in use: v g1-s(b) =0v; v ds(b) =0v. [2] calculated from s-parameters. [3] measured in figure 33 test circuit. 8.1.1 graphics for amplifier a xmod cross modulation in put level for k = 1 %; f w =50mhz; f unw =60mhz [3] at 0 db agc 90 - - db ? v at 10 db agc - 90 - db ? v at 20 db agc - 99 - db ? v at 40 db agc 102 105 - db ? v table 8. dynamic characteristics for amplifier a [1] ?continued common source; t amb =25 ? c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise specified. symbol parameter conditions min typ max unit (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 ? c. (1) v g1-s(a) =1.8v. (2) v g1-s(a) =1.7v. (3) v g1-s(a) =1.6v. (4) v g1-s(a) =1.5v. (5) v g1-s(a) =1.4v. (6) v g1-s(a) =1.3v. (7) v g1-s(a) =1.2v. (8) v g1-s(a) =1.1v. (9) v g1-s(a) =1v. v g2-s =4v; v g1-s(b) =v ds(b) =0v; t j =25 ? c. fig 4. amplifier a: transfer characteristics; typical values fig 5. amplifier a: output characteristics; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa554 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (7) (6) 001aaa555 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (3) (4) (6) (7) (9) (8) (5) (1)
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 7 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 ? c. v ds(a) =5v; v g2-s =4v; v ds(b) =5v; v g1-s(b) =0v; t j =25 ? c. i d(b) = internal gate1 current = current in pin drain (amp b) if mosfet (b) is switched off. fig 6. amplifier a: forward transfer admittance as a function of drain current; typical values fig 7. amplifier a: drain current as a function of internal gate1 current; typical values i d (ma) 032 24 816 001aaa556 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) 001aac206 i d(b) (a) 060 40 20 8 12 4 16 20 i d(a) (ma) 0
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 8 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet v ds(a) =v ds(b) =v sup ; v g2-s =4v; t j =25 ? c; r g1 =86k ? (connected to ground); see figure 3 . (1) v ds(b) =5v. (2) v ds(b) =4.5v. (3) v ds(b) =4v. (4) v ds(b) =3.5v. (5) v ds(b) =3v. (6) v ds(b) =2.5v. v ds(a) =5v; v g1-s(b) = 0 v; gate1 (amp a) is open; t j =25 ? c. fig 8. amplifier a: drain current of amplifier a as a function of supply voltage of a and b amplifier; typical values fig 9. amplifier a: drain current as a function of gate2 voltage; typical values v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w =50mhz; f unw =60mhz; t amb =25 ? c; see figure 33 . v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; see figure 33 . fig 10. amplifier a: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values fig 11. amplifier a: gain reduction as a function of agc voltage; typical values v sup (v) 05 4 23 1 001aaa558 8 12 4 16 20 i d (ma) 0 001aaa559 v g2-s (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (3) (4) (5) (6) gain reduction (db) 050 40 20 30 10 001aac195 100 90 110 120 v unw (dbv) 80 v agc (v) 04 3 12 001aac196 30 20 40 10 0 gain reduction (db) 50
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 9 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f=50mhz; t amb =25 ? c; see figure 33 . v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 12. amplifier a: drain current as a function of gain reduction; typical values fig 13. amplifier a: input admittance as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 14. amplifier a: forward transfer admittance and phase as a function of frequency; typical values fig 15. amplifier a: reverse transfer admittance and phase as a function of frequency; typical values gain reduction (db) 050 40 20 30 10 001aac197 12 20 28 i d (ma) 4 001aaa564 f (mhz) 10 10 3 10 2 10 ?1 1 10 10 2 b is , g is (ms) 10 ?2 b is g is 001aag358 10 1 10 2 y fs (ms) 10 ?1 ?10 ?1 ?10 2 ? fs (deg) ?10 ?1 f (mhz) 10 10 3 10 2 y fs ? fs 001aaa566 10 2 10 10 3 y rs (ms) 1 10 2 10 10 3 ?? rs (deg) 1 f (mhz) 10 10 3 10 2 y rs ?? rs
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 10 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 8.1.2 scattering parameters for amplifier a 8.1.3 noise data for amplifier a v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 16. amplifier a: output admittance as a function of frequency; typical values 001aag360 1 10 ?1 10 b os , g os (ms) 10 ?2 f (mhz) 10 10 3 10 2 b os g os table 9. scattering parameters for amplifier a v ds(a) =5v; v g2-s =4v; i d(a) =19ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 ? c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 40 0.9927 ? 4.10 3.1833 175.69 0.0006 92.99 0.9927 ? 1.24 100 0.9897 ? 7.68 3.1743 171.77 0.0011 81.72 0.9923 ? 2.54 200 0.9852 ? 15.36 3.1494 163.56 0.0023 79.23 0.9912 ? 5.09 300 0.9758 ? 22.84 3.1146 155.46 0.0033 74.65 0.9904 ? 7.60 400 0.9655 ? 30.19 3.0718 147.53 0.0042 70.46 0.9890 ? 10.10 500 0.9513 ? 37.55 3.0156 139.61 0.0049 66.38 0.9874 ? 12.60 600 0.9341 ? 44.85 2.9482 131.74 0.0056 62.22 0.9853 ? 15.11 700 0.9160 ? 51.99 2.8755 124.04 0.0061 58.44 0.9832 ? 17.61 800 0.8964 ? 58.99 2.8003 116.41 0.0064 54.48 0.9806 ? 20.12 900 0.8737 ? 65.84 2.7206 108.93 0.0066 50.78 0.9793 ? 22.57 1000 0.8499 ? 72.51 2.6352 101.62 0.0067 46.49 0.9776 ? 25.05 table 10. noise data for amplifier a v ds(a) =5v; v g2-s =4v; i d(a) =19ma; v ds(b) =0v; v g1-s(b) =0v; t amb =25 ? c; typical values; unless otherwise specified. f (mhz) nf min (db) ? opt r n (ratio) (ratio) (degree) 400 0.9 0.77 22.7 0.65 800 1.1 0.73 45.75 0.62
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 11 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 8.2 dynamic characteristics for amplifier b [1] for the mosfet not in use: v g1-s(a) = 0 v; v ds(a) =0 v. [2] calculated from s-parameters. [3] measured in figure 34 test circuit. table 11. dynamic characteristics for amplifier b [1] common source; t amb =25 ? c; v g2-s =4v; v ds =5v; i d = 15 ma; unless otherwise specified. symbol parameter conditions min typ max unit ?y fs ? forward transfer admittance f = 100 mhz; t j =25 ?c2 5 3 0 4 0 m s c iss(g1) input capacitance at gate1 f = 100 mhz [2] -2.12.6pf c iss(g2) input capacitance at gate2 f = 100 mhz [2] -3.4-pf c oss output capacitance f = 100 mhz [2] -0.85-pf c rss reverse transfer capacitance f = 100 mhz [2] -20-ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s =2ms; g l = 0.5 ms 31 35 39 db f = 400 mhz; g s =2ms; g l = 1 ms 28 32 36 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 26 30 34 db nf noise figure f = 11 mhz; g s =20ms; b s =0s - 3 - db f = 400 mhz; y s =y s(opt) -1.11.7db f = 800 mhz; y s =y s(opt) -1.42.0db xmod cross modulation input level for k = 1 %; f w =50mhz; f unw =60mhz [3] at 0 db agc 90 - - db ? v at 10 db agc - 90 - db ? v at 20 db agc - 98 - db ? v at 40 db agc 102 105 - db ? v
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 12 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 8.2.1 graphics for amplifier b (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 ? c. (1) v g1-s(b) =1.6v. (2) v g1-s(b) =1.5v. (3) v g1-s(b) =1.4v. (4) v g1-s(b) =1.3v. (5) v g1-s(b) =1.2v. (6) v g1-s(b) =1.1v. (7) v g1-s(b) =1v. v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 ? c. fig 17. amplifier b: transfer characteristics; typical values fig 18. amplifier b: output characteristics; typical values v g1-s (v) 0 2.0 1.6 0.8 1.2 0.4 001aag361 10 20 30 i d (ma) 0 (4) (5) (6) (7) (1) (2) (3) v ds (v) 06 4 2 001aag362 8 16 24 i d (ma) 0 (7) (6) (5) (4) (3) (2) (1)
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 13 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 ? c. (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 ? c. fig 19. amplifier b: gate1 current as a function of gate1 voltage; typical values fig 20. amplifier b: forward transfer admittance as a function of drain current; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 ? c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 ? c; r g1 =86k ? (connected to v gg ); see figure 3 . fig 21. amplifier b: drain current as a function of gate1 current; typical values fig 22. amplifier b: drain current as a function of gate1 supply voltage; typical values v g1-s (v) 0 2.0 1.6 0.8 1.2 0.4 001aag363 40 60 20 80 100 i g1 (a) 0 (1) (2) (5) (7) (3) (4) (6) i d (ma) 032 24 816 001aag364 16 24 8 32 40 0 y fs (ms) (1) (2) (3) (4) (5) (7) (6) i g1 (a) 050 40 20 30 10 001aag365 8 12 4 16 20 i d (ma) 0 v gg (v) 05 4 23 1 001aag366 8 12 4 16 20 i d (ma) 0
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 14 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet (1) r g1 =47k ? . (2) r g1 =56k ? . (3) r g1 =68k ? . (4) r g1 =82k ? . (5) r g1 =86k ? . (6) r g1 = 100 k ? . (7) r g1 = 120 k ? . (8) r g1 = 150 k ? . (9) r g1 = 180 k ? . v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 ? c; r g1 is connected to v gg ; see figure 3 . (1) v gg =5.0v. (2) v gg =4.5v. (3) v gg =4.0v. (4) v gg =3.5v. (5) v gg =3.0v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 ? c; r g1 =86k ? (connected to v gg ); see figure 3 . fig 23. amplifier b: drain current as a function of gate1 supply voltage and drain supply voltage; typical values fig 24. amplifier b: drain current as a function of gate2 voltage; typical values v gg = v ds (v) 05 4 23 1 001aag367 10 15 5 20 25 i d (ma) 0 (1) (4) (5) (6) (7) (8) (9) (3) (2) v g2-s (v) 06 4 2 001aag368 8 16 24 i d (ma) 0 (5) (3) (2) (1) (4)
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 15 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet (1) v gg =5.0v. (2) v gg =4.5v. (3) v gg =4.0v. (4) v gg =3.5v. (5) v gg =3.0v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 ? c; r g1 =86k ? (connected to v gg ); see figure 3 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k ? (connected to v gg ); f w =50mhz; f unw =60mhz; t amb =25 ? c; see figure 34 . fig 25. amplifier b: gate1 current as a function of gate2 voltage; typical values fig 26. amplifier b: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k ? (connected to v gg ); f = 50 mhz; t amb =25 ? c; see figure 34 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k ? (connected to v gg ); f = 50 mhz; t amb =25 ? c; see figure 34 . fig 27. amplifier b: gain reduction as a function of agc voltage; typical values fig 28. amplifier b: drain current as a function of gain reduction; typical values 001aag369 v g2-s (v) 06 4 2 20 30 10 40 50 i g1 (a) 0 (5) (3) (2) (1) (4) 001aag370 gain reduction (db) 060 40 20 100 90 110 120 v unw (dbv) 80 v agc (v) 04 3 12 001aag371 30 20 40 10 0 50 gain reduction (db) 001aag372 gain reduction (db) 060 40 20 12 6 18 24 i d (ma) 0
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 16 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma fig 29. amplifier b: input ad mittance as a function of frequency; typical values fig 30. amplifier b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma fig 31. amplifier b: reverse transfer admittance and phase as a function of frequency; typical values fig 32. amplifier b: output admittance as a function of frequency; typical values 001aaa581 f (mhz) 10 10 3 10 2 10 ?1 1 10 10 2 b is , g is (ms) 10 ?2 b is g is f (mhz) 10 10 3 10 2 001aag374 ?10 ?10 2 ?1 ? fs (deg) 10 10 2 1 y fs (ms) y fs ? fs 001aaa583 10 2 10 10 3 y rs (s) 1 10 2 10 10 3 ?? rs (deg) 1 f (mhz) 10 10 3 10 2 y rs ?? rs 001aag376 1 10 ?1 10 b os , g os (ms) 10 ?2 f (mhz) 10 10 3 10 2 b os g os
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 17 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 8.2.2 scattering parameters for amplifier b 8.2.3 noise data for amplifier b table 12. scattering parameters for amplifier b v ds(b) =5v; v g2-s =4v; i d(b) =15ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 ? c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 40 0.9841 ? 4.20 2.9772 175.44 0.0005 106.03 0.9923 ? 1.40 100 0.9799 ? 7.68 2.9694 171.40 0.0011 88.52 0.9927 ? 2.88 200 0.9775 ? 15.24 2.9472 162.86 0.0023 87.60 0.9914 ? 5.77 300 0.9706 ? 22.70 2.9147 154.41 0.0034 85.98 0.9902 ? 8.61 400 0.9632 ? 30.08 2.8754 146.10 0.0046 85.09 0.9888 ? 11.43 500 0.9515 ? 37.46 2.8213 137.77 0.0056 84.03 0.9870 ? 14.26 600 0.9377 ? 44.80 2.7560 129.44 0.0065 83.30 0.9839 ? 17.16 700 0.9229 ? 52.10 2.6865 121.24 0.0075 82.99 0.9810 ? 20.05 800 0.9062 ? 59.33 2.6119 113.09 0.0084 82.08 0.9777 ? 22.93 900 0.8864 ? 66.35 2.5318 105.04 0.0091 81.36 0.9754 ? 25.77 1000 0.8650 ? 73.21 2.4437 97.11 0.0098 80.34 0.9714 ? 28.64 table 13. noise data for amplifier b v ds(b) =5v; v g2-s =4v; i d(b) =15ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 ? c; typical values; unless otherwise specified. f (mhz) nf min (db) ? opt r n ( ? ) (ratio) (degree) 400 1.1 0.72 22.83 0.66 800 1.4 0.68 46.42 0.64
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 18 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 9. test information fig 33. cross modulation test set-up for amplifier a fig 34. cross modulation test set-up for amplifier b 50 10 k r gen 50 r l 50 50 r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a BF1218 v gg 0v v agc l2 2.2 h l1 2.2 h 001aak331 v i v ds(a) 5v v ds(a) 5v 50 10 k r gen 50 50 r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a BF1218 v gg 5v v agc l2 2.2 h l1 2.2 h r l 50 v i v ds(a) 5v v ds(a) 5v
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 19 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 10. package outline fig 35. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 45 6 plastic surface-mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 20 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 11. abbreviations 12. revision history table 14. abbreviations acronym description agc automatic gain control dc direct current mosfet metal-oxide semiconductor field-effect transistor uhf ultra high frequency vhf very high frequency table 15. revision history document id release date data sheet status change notice supersedes BF1218_1 20100414 product data sheet - -
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 21 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BF1218_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 14 april 2010 22 of 23 nxp semiconductors BF1218 dual n-channel dual gate mosfet in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BF1218 dual n-channel dual gate mosfet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 14 april 2010 document identifier: BF1218_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 dynamic characteristics for amplifier a. . . . . . . 5 8.1.1 graphics for amplifier a . . . . . . . . . . . . . . . . . . 6 8.1.2 scattering parameters fo r amplifier a . . . . . . . 10 8.1.3 noise data for amplifier a . . . . . . . . . . . . . . . . 10 8.2 dynamic characteristics for amplifier b. . . . . . 11 8.2.1 graphics for amplifier b . . . . . . . . . . . . . . . . . 12 8.2.2 scattering parameters fo r amplifier b . . . . . . . 17 8.2.3 noise data for amplifier b . . . . . . . . . . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 20 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 21 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 21 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 22 14 contact information. . . . . . . . . . . . . . . . . . . . . 22 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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